Veselago lensing in graphene with a p-n junction: Classical versus quantum effects

Journal Article · Wed Oct 21 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4933395· OSTI ID:22492823

Milovanović, S. P., E-mail: [e-mail]; Moldovan, D., E-mail: [e-mail]; Peeters, F. M., E-mail: [e-mail] ^[1]

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1. Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen (Belgium)

The feasibility of Veselago lensing in graphene with a p-n junction is investigated numerically for realistic injection leads. Two different set-ups with two narrow leads are considered with absorbing or reflecting side edges. This allows us to separately determine the influence of scattering on electron focusing for the edges and the p-n interface. Both semiclassical and tight-binding simulations show a distinctive peak in the transmission probability that is attributed to the Veselago lensing effect. We investigate the robustness of this peak on the width of the injector, the position of the p-n interface, and different gate potential profiles. Furthermore, the influence of scattering by both short- and long-range impurities is considered.

• OSTI ID: 22492823
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
GRAPHENE
P-N JUNCTIONS
SCATTERING
SEMICLASSICAL APPROXIMATION
SIMULATION
TRANSMISSION