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Title: Optoelectronic properties of p-diamond/n-GaN nanowire heterojunctions

In this work, nanodiodes comprised of n-GaN nanowires on p-diamond substrates are investigated. The electric transport properties are discussed on the basis of simulations and determined experimentally for individual p-diamond/n-GaN nanodiodes by applying conductive atomic force microscopy. For low doping concentrations, a high rectification ratio is observed. The fabrication of a prototype nanoLED device on the basis of ensemble nanowire contacts is presented, showing simultaneous electroluminescence in the UV and the green spectral range which can be ascribed to hole injection into the n-GaN nanowires and electron injection into the p-diamond, respectively. In addition, the operation and heat distribution of the nanoLED device are visualized by active thermographic imaging.
Authors:
; ; ; ;  [1] ; ;  [2] ;  [2] ;  [3]
  1. Walter Schottky Institut and Physics Department, Technische Universität München, 85748 Garching (Germany)
  2. Fraunhofer-Institut für Angewandte Festkörperphysik IAF, 79108 Freiburg (Germany)
  3. (Japan)
Publication Date:
OSTI Identifier:
22492821
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMIC FORCE MICROSCOPY; BIOMEDICAL RADIOGRAPHY; DIAMONDS; ELECTROLUMINESCENCE; ELECTRON BEAM INJECTION; GALLIUM NITRIDES; HETEROJUNCTIONS; NANOWIRES; SIMULATION; SUBSTRATES