Optoelectronic properties of p-diamond/n-GaN nanowire heterojunctions
- Walter Schottky Institut and Physics Department, Technische Universität München, 85748 Garching (Germany)
- Fraunhofer-Institut für Angewandte Festkörperphysik IAF, 79108 Freiburg (Germany)
In this work, nanodiodes comprised of n-GaN nanowires on p-diamond substrates are investigated. The electric transport properties are discussed on the basis of simulations and determined experimentally for individual p-diamond/n-GaN nanodiodes by applying conductive atomic force microscopy. For low doping concentrations, a high rectification ratio is observed. The fabrication of a prototype nanoLED device on the basis of ensemble nanowire contacts is presented, showing simultaneous electroluminescence in the UV and the green spectral range which can be ascribed to hole injection into the n-GaN nanowires and electron injection into the p-diamond, respectively. In addition, the operation and heat distribution of the nanoLED device are visualized by active thermographic imaging.
- OSTI ID:
- 22492821
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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