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Title: Identification of donor deactivation centers in heavily As-doped Si using time-of-flight medium-energy ion scattering spectroscopy

Electrically-inactive arsenic (As) complexes in silicon are investigated using time-of-flight medium-energy ion scattering spectroscopy. In heavily As-doped Si, the As atoms that are segregated in the Si interface region just below the SiO{sub 2} are found to be in interstitial forms (As{sub i}), while the As atoms in the bulk Si region are found to be in the substitutional form (As{sub Si}). Despite the substitutional form of As, most of the As are found to be electrically inactive in the bulk region, and we identify the As to be in the form of a 〈111〉-oriented As{sub Si}-Si-vacancy (As{sub Si}-V{sub Si}) complex. The As{sub i} atoms in the interface Si region are found to exist together with Si-interstitial atoms (Si{sub i}), suggesting that the As{sub i} atoms in the interface Si region accompany the Si{sub i} atoms.
Authors:
; ;  [1] ;  [2] ;  [2] ;  [3] ;  [4]
  1. Korea Materials and Analysis Corporation, Daejeon 305-500 (Korea, Republic of)
  2. Korea Research Institute of Standards and Science, Daejeon 305-340 (Korea, Republic of)
  3. (Korea, Republic of)
  4. Department of New Biology, DGIST, Dalseong, Daegu 711-873 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22492792
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ARSENIC COMPLEXES; ATOMS; DOPED MATERIALS; INTERFACES; SCATTERING; SILICON; SILICON OXIDES; SPECTROSCOPY; TIME-OF-FLIGHT METHOD; VACANCIES