Identification of donor deactivation centers in heavily As-doped Si using time-of-flight medium-energy ion scattering spectroscopy

Journal Article · Wed Oct 07 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4932149· OSTI ID:22492792

Min, Won Ja; Park, Kyungsu; Yu, Kyu-Sang ^[1]; Joo, Sungjung ^[2]; Kim, Yong-Sung ^[2]

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1. Korea Materials and Analysis Corporation, Daejeon 305-500 (Korea, Republic of)
2. Korea Research Institute of Standards and Science, Daejeon 305-340 (Korea, Republic of)

Electrically-inactive arsenic (As) complexes in silicon are investigated using time-of-flight medium-energy ion scattering spectroscopy. In heavily As-doped Si, the As atoms that are segregated in the Si interface region just below the SiO{sub 2} are found to be in interstitial forms (As{sub i}), while the As atoms in the bulk Si region are found to be in the substitutional form (As{sub Si}). Despite the substitutional form of As, most of the As are found to be electrically inactive in the bulk region, and we identify the As to be in the form of a 〈111〉-oriented As{sub Si}-Si-vacancy (As{sub Si}-V{sub Si}) complex. The As{sub i} atoms in the interface Si region are found to exist together with Si-interstitial atoms (Si{sub i}), suggesting that the As{sub i} atoms in the interface Si region accompany the Si{sub i} atoms.

• OSTI ID: 22492792
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ARSENIC COMPLEXES
ATOMS
DOPED MATERIALS
INTERFACES
SCATTERING
SILICON
SILICON OXIDES
SPECTROSCOPY
TIME-OF-FLIGHT METHOD
VACANCIES