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Title: Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 × 10{sup 9}/cm{sup 2} and <1 nm surface roughness. The 2-D electron gas channels formed at an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600–1900 cm{sup 2}/V s at a carrier concentration of 0.7–0.9 × 10{sup 13}/cm{sup 2}. Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner.
Authors:
;  [1] ;  [2] ; ;  [3]
  1. Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)
  2. (India)
  3. Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012 (India)
Publication Date:
OSTI Identifier:
22492787
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; ALUMINIUM NITRIDES; CARRIERS; DISLOCATIONS; EFFICIENCY; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDES; INTERFACES; LAYERS; ROUGHNESS; STRESSES; SUPERLATTICES; SURFACES; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY