skip to main content

SciTech ConnectSciTech Connect

Title: Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology.
Authors:
; ;  [1] ;  [2] ; ; ; ;  [1] ; ; ;  [3] ;  [2] ;  [4] ;  [2]
  1. Electrical Engineering Department, Technion, Haifa 3200 (Israel)
  2. (Israel)
  3. Department of Material Science and Engineering, Technion, Haifa 3200 (Israel)
  4. Russell Berrie Nanotechnology Institute, Technion, Haifa 3200 (Israel)
Publication Date:
OSTI Identifier:
22492782
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; FABRICATION; ILLUMINANCE; METALS; NONLINEAR PROBLEMS; PHOTODETECTORS; SENSORS; VARIABLE CAPACITANCE DIODES