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Title: Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors

Efficient quantum mechanical simulation of tunnel field-effect transistors (TFETs) is indispensable to allow for an optimal configuration identification. We therefore present a full-zone 15-band quantum mechanical solver based on the envelope function formalism and employing a spectral method to reduce computational complexity and handle spurious solutions. We demonstrate the versatility of the solver by simulating a 40 nm wide In{sub 0.53}Ga{sub 0.47}As lineTFET and comparing it to p-n-i-n configurations with various pocket and body thicknesses. We find that the lineTFET performance is not degraded compared to semi-classical simulations. Furthermore, we show that a suitably optimized p-n-i-n TFET can obtain similar performance to the lineTFET.
Authors:
;  [1] ;  [2] ; ; ; ;  [1] ; ;  [1] ;  [2] ;  [1] ;  [2] ;  [2]
  1. imec, Kapeldreef 75, 3001 Leuven (Belgium)
  2. (Belgium)
Publication Date:
OSTI Identifier:
22492780
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONFIGURATION; FIELD EFFECT TRANSISTORS; OPTIMIZATION; PERFORMANCE; QUANTUM MECHANICS; THICKNESS; ZONES