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Title: Characterization of carrier transport properties in strained crystalline Si wall-like structures in the quasi-quantum regime

We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si “wall-like” long-channels that were surrounded by a thermally grown SiO{sub 2} layer. The strained buffering depth inside the Si region (due to Si/SiO{sub 2} interfacial lattice mismatch) is where scattering is seen to enhance some modes of the carrier-lattice interaction, while suppressing others, thereby changing the relative value of the effective masses of both electrons and holes, as compared to bulk Si. In the narrowest wall devices, a considerable increase in conductivity was observed as a result of higher carrier mobilities due to lateral constriction and strain. The strain effects, which include the reversal splitting of light- and heavy-hole bands as well as the decrease of conduction-band effective mass by reduced Si bandgap energy, are formulated in our microscopic model for explaining the experimentally observed enhancements in both conduction- and valence-band mobilities with reduced Si wall thickness. Also, the enhancements of the valence-band and conduction-band mobilities are found to be associated with different aspects of theoretical model.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [2] ;  [4] ;  [1] ;  [4]
  1. Air Force Research Laboratory, Space Vehicles Directorate, Kirtland Air Force Base, New Mexico 87117 (United States)
  2. Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States)
  3. Department of Electrical and Computer Engineering, University of Missouri-Columbia, Columbia, Missouri 65211 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22492774
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER MOBILITY; CARRIERS; CRYSTAL DEFECTS; DEPTH; HOLES; LAYERS; SCATTERING; SILICA; SILICON OXIDES; STRAINS; THICKNESS; VALENCE