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Title: Giant supercurrent states in a superconductor-InAs/GaSb-superconductor junction

Superconductivity in topological materials has attracted a great deal of interest in both electron physics and material sciences since the theoretical predictions that Majorana fermions can be realized in topological superconductors. Topological superconductivity could be realized in a type II, band-inverted, InAs/GaSb quantum well if it is in proximity to a conventional superconductor. Here, we report observations of the proximity effect induced giant supercurrent states in an InAs/GaSb bilayer system that is sandwiched between two superconducting tantalum electrodes to form a superconductor-InAs/GaSb-superconductor junction. Electron transport results show that the supercurrent states can be preserved in a surprisingly large temperature-magnetic field (T – H) parameter space. In addition, the evolution of differential resistance in T and H reveals an interesting superconducting gap structure.
Authors:
; ; ;  [1] ; ;  [2] ;  [3]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
  2. School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
  3. Department of Physics, Princeton University, Princeton, New Jersey 08544 (United States)
Publication Date:
OSTI Identifier:
22492771
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRONS; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; MAGNETIC FIELDS; MATERIALS; PROXIMITY EFFECT; QUANTUM WELLS; SUPERCONDUCTING JUNCTIONS; SUPERCONDUCTIVITY; SUPERCONDUCTORS