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Title: Hole transport assisted by the piezoelectric field in In{sub 0.4}Ga{sub 0.6}N/GaN quantum wells under electrical injection

The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells (QWs) with an indium mole fraction of 40%. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5‚ÄČkA/cm{sup 2}. The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs.
Authors:
;  [1] ;  [2] ; ; ; ; ;  [1] ; ; ;  [3]
  1. Institute of Photonics, SUPA, University of Strathclyde, Glasgow G4 0NW (United Kingdom)
  2. (United Kingdom)
  3. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)
Publication Date:
OSTI Identifier:
22492760
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; CURRENT DENSITY; ELECTROLUMINESCENCE; GALLIUM NITRIDES; INDIUM; LIGHT EMITTING DIODES; PIEZOELECTRICITY; QUANTUM WELLS; SIMULATION; SPECTRA