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Title: The influence of electron energy quantization in a space-charge region on the accumulation capacitance of InAs metal-oxide-semiconductor capacitors

The influence of electron energy quantization in a space-charge region on the accumulation capacitance of the InAs-based metal-oxide-semiconductor capacitors (MOSCAPs) has been investigated by modeling and comparison with the experimental data from Au/anodic layer(4-20 nm)/n-InAs(111)A MOSCAPs. The accumulation capacitance for MOSCAPs has been calculated by the solution of Poisson equation with different assumptions and the self-consistent solution of Schrödinger and Poisson equations with quantization taken into account. It was shown that the quantization during the MOSCAPs accumulation capacitance calculations should be taken into consideration for the correct interface states density determination by Terman method and the evaluation of gate dielectric thickness from capacitance-voltage measurements.
Authors:
; ; ; ; ;  [1] ;  [1] ;  [2]
  1. Rzhanov Institute of Semiconductor Physics, SB RAS, 13 Lavrentiev Ave., Novosibirsk 630090 (Russian Federation)
  2. (Russian Federation)
Publication Date:
OSTI Identifier:
22492759
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; INDIUM ARSENIDES; INTERFACES; LAYERS; METALS; OXIDES; POISSON EQUATION; QUANTIZATION; SIMULATION; SPACE CHARGE