skip to main content

Title: An atomistic vision of the Mass Action Law: Prediction of carbon/oxygen defects in silicon

We introduce an atomistic description of the kinetic Mass Action Law to predict concentrations of defects and complexes. We demonstrate in this paper that this approach accurately predicts carbon/oxygen related defect concentrations in silicon upon annealing. The model requires binding and migration energies of the impurities and complexes, here obtained from density functional theory (DFT) calculations. Vacancy-oxygen complex kinetics are studied as a model system during both isochronal and isothermal annealing. Results are in good agreement with experimental data, confirming the success of the methodology. More importantly, it gives access to the sequence of chain reactions by which oxygen and carbon related complexes are created in silicon. Beside the case of silicon, the understanding of such intricate reactions is a key to develop point defect engineering strategies to control defects and thus semiconductors properties.
Authors:
; ; ;  [1] ;  [2] ; ;  [3]
  1. CEA, INAC-SP2M, Atomistic Simulation Laboratory, F-38000 Grenoble (France)
  2. (France)
  3. University of Athens, Solid State Physics Section, Panepistimiopolis Zografos, Athens 157 84 (Greece)
Publication Date:
OSTI Identifier:
22492757
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; CARBON; DENSITY FUNCTIONAL METHOD; MASS; OXYGEN; OXYGEN COMPLEXES; SEMICONDUCTOR MATERIALS; SILICON; VACANCIES