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Title: Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors

Using practical high-density sputtering targets, we investigated the effect of Zn and W codoping on the thermal stability of the amorphous film and the electrical characteristics in thin film transistors. zinc oxide is a potentially conductive component while W oxide is an oxygen vacancy suppressor in oxide films. The oxygen vacancy from In-O and Zn-O was suppressed by the W additive because of the high oxygen bond dissociation energy. With controlled codoping of W and Zn, we demonstrated a high mobility with a maximum mobility of 40 cm{sup 2}/V s with good stability under a negative bias stress in InWZnO thin film transistors.
Authors:
; ;  [1] ; ;  [2] ;  [3]
  1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
  2. Advanced Materials R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koyakita, Itami, Hyogo 664-0016 (Japan)
  3. MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
Publication Date:
OSTI Identifier:
22492754
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ADDITIVES; DENSITY; DISSOCIATION ENERGY; INDIUM; MOBILITY; OXYGEN; SPUTTERING; THIN FILMS; TRANSISTORS; TUNGSTEN; VACANCIES; ZINC; ZINC OXIDES