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Title: Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition

Unintentional incorporation of gallium (Ga) in InAlN layers grown with different molar flow rates of Group-III precursors by metalorganic chemical vapor deposition has been experimentally investigated. The Ga mole fraction in the InAl(Ga)N layer was increased significantly with the trimethylindium (TMIn) flow rate, while the trimethylaluminum flow rate controls the Al mole fraction. The evaporation of metallic Ga from the liquid phase eutectic system between the pyrolized In from injected TMIn and pre-deposited metallic Ga was responsible for the Ga auto-incorporation into the InAl(Ga)N layer. The theoretical calculation on the equilibrium vapor pressure of liquid phase Ga and the effective partial pressure of Group-III precursors based on growth parameters used in this study confirms the influence of Group-III precursors on Ga auto-incorporation. More Ga atoms can be evaporated from the liquid phase Ga on the surrounding surfaces in the growth chamber and then significant Ga auto-incorporation can occur due to the high equilibrium vapor pressure of Ga comparable to effective partial pressure of input Group-III precursors during the growth of InAl(Ga)N layer.
Authors:
; ;  [1] ;  [1] ;  [2] ; ;  [3] ;  [4]
  1. Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777Atlantic Dr. NW, Atlanta, Georgia 30332-0250 (United States)
  2. (United States)
  3. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)
  4. Department of Mechanical Engineering, Materials Science and Engineering Program, and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, Texas 77204-4006 (United States)
Publication Date:
OSTI Identifier:
22492746
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMS; CHEMICAL VAPOR DEPOSITION; EPITAXY; EQUILIBRIUM; EUTECTICS; EVAPORATION; FLOW RATE; GALLIUM; LAYERS; LIQUIDS; PARTIAL PRESSURE; PRECURSOR; SURFACES; VAPOR PRESSURE