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Title: Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10{sup 4} and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10{sup 4} s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [6]
  1. Qatar Environment and Energy Research Institute (QEERI), Qatar Foundation, P.O. Box 5825, Doha (Qatar)
  2. (Canada)
  3. Telebec Wireless Underground Communication Laboratory, UQAT, 675, 1ère Avenue, Val d'Or, Quebec J9P 1Y3 (Canada)
  4. NanoIntegris & Raymor Nanotech, Raymor Industries Inc., 3765 La Vérendrye, Boisbriand, Quebec J7H 1R8 (Canada)
  5. Department of Mechanical Engineering, McGill University, Montreal, Quebec H3A 0B8 (Canada)
  6. Centre Energie, Matériaux et Télécommunications, INRS, 1650, Boulevard Lionel-Boulet Varennes, Quebec J3X 1S2 (Canada)
Publication Date:
OSTI Identifier:
22492736
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARBON NANOTUBES; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; ILLUMINANCE; MEMORY DEVICES; OPERATION; PERFORMANCE; PROGRAMMING; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; VISIBLE RADIATION