Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

Journal Article · Mon Sep 28 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4931663· OSTI ID:22492736

Nedil, M. ^[1]; Kroeger, J. ^[2]; Haddad, T. ^[3]; Rosei, F. ^[4]

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1. Telebec Wireless Underground Communication Laboratory, UQAT, 675, 1ère Avenue, Val d'Or, Quebec J9P 1Y3 (Canada)
2. NanoIntegris & Raymor Nanotech, Raymor Industries Inc., 3765 La Vérendrye, Boisbriand, Quebec J7H 1R8 (Canada)
3. Department of Mechanical Engineering, McGill University, Montreal, Quebec H3A 0B8 (Canada)
4. Centre Energie, Matériaux et Télécommunications, INRS, 1650, Boulevard Lionel-Boulet Varennes, Quebec J3X 1S2 (Canada)

We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10{sup 4} and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10{sup 4} s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices.

• OSTI ID: 22492736
• Journal Information: Journal of Applied Physics, Vol. 118, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARBON NANOTUBES
ELECTRIC FIELDS
FIELD EFFECT TRANSISTORS
ILLUMINANCE
MEMORY DEVICES
OPERATION
PERFORMANCE
PROGRAMMING
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
VISIBLE RADIATION