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Title: Gate length and temperature dependence of negative differential transconductance in silicon quantum well metal-oxide-semiconductor field-effect transistors

Introducing quantum transport into silicon transistors in a manner compatible with industrial fabrication has the potential to transform the performance horizons of large scale integrated silicon devices and circuits. Explicit quantum transport as evidenced by negative differential transconductances (NDTCs) has been observed in a set of quantum well (QW) transistors fabricated using industrial silicon complementary metal-oxide-semiconductor processing. Detailed gate length and temperature dependence characteristics of the NDTCs in these devices have been measured. The QW potential was formed via lateral ion implantation doping on a commercial 45 nm technology node process line, and measurements of the transfer characteristics show NDTCs up to room temperature. Gate length dependence of NDTCs shows a correlation of the interface channel length with the number of NDTCs formed as well as with the gate voltage (V{sub G}) spacing between NDTCs. The V{sub G} spacing between multiple NDTCs suggests a quasi-parabolic QW potential profile. The temperature dependence is consistent with partial freeze-out of carrier concentration against a degenerately doped background.
Authors:
;  [1] ; ; ; ;  [2]
  1. Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)
  2. Texas Instruments Inc., Richardson, Texas 75243 (United States)
Publication Date:
OSTI Identifier:
22492734
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; DOPED MATERIALS; ELECTRIC POTENTIAL; FABRICATION; FIELD EFFECT TRANSISTORS; FREEZING OUT; INTERFACES; LENGTH; METALS; OXIDES; PERFORMANCE; PROCESSING; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K