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Title: Assessment of performance potential of MoS{sub 2}-based topological insulator field-effect transistors

It was suggested that single-layer MoS{sub 2} at the 1T′ phase is a topological insulator whose electronic structure can be modulated by a vertical electric field for field-effect transistor (FET) applications [X. Qian, J. Liu, L. Fu, and J. Li, Science 346, 1344 (2014)]. In this work, performance potential of FETs based on vertical field modulation of the topological edge states is assessed by using quantum transport device simulations. To perform efficient device simulations, a phenomenological Hamiltonian is first proposed and validated to capture the effects of electric fields. Because the ON-state conductance is determined by transport through gapless edge states with a long scattering mean free path and the OFF-state conductance by transport through the gapped bulk states, the ON/OFF ratio is sensitive to the channel length, which is different from conventional FETs. Although a high vertical electric field is required to modulate the topological edge state, a reasonably small subthreshold swing of 131 mV/dec can still be achieved for a practical value of the gate insulator thickness.
Authors:
;  [1]
  1. Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States)
Publication Date:
OSTI Identifier:
22492733
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPTURE; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; HAMILTONIANS; LENGTH; MEAN FREE PATH; MODULATION; MOLYBDENUM SULFIDES; SCATTERING; SIMULATION; THICKNESS; TOPOLOGY