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Title: High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs

InAs/GaSb mid-wave, cascaded superlattice light emitting diodes are found to give higher radiance when epitaxially grown on mismatched GaAs substrates compared to lattice-matched GaSb substrates. Peak radiances of 0.69 W/cm{sup 2}-sr and 1.06 W/cm{sup 2}-sr for the 100 × 100 μm{sup 2} GaSb and GaAs-based devices, respectively, were measured at 77 K. Measurement of the recombination coefficients shows the shorter Shockley-Read-Hall recombination lifetime as misfit dislocations for growth on GaAs degrade the quantum efficiency only at low current injection. The improved performance on GaAs was found to be due to the higher transparency and improved thermal properties of the GaAs substrate.
Authors:
; ; ; ;  [1] ;  [2]
  1. Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52240 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22492711
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPARATIVE EVALUATIONS; DISLOCATIONS; EPITAXY; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; INDIUM ARSENIDES; LIGHT EMITTING DIODES; OPACITY; QUANTUM EFFICIENCY; RECOMBINATION; SUBSTRATES; SUPERLATTICES; THERMODYNAMIC PROPERTIES