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Title: Ultrahigh sensitive MoTe{sub 2} phototransistors driven by carrier tunneling

Transition metal dichalcogenides (TMDs) demonstrate great potential in electronic and optoelectronic applications. However, the device performance remains limited because of the poor metal contact. Herein, we fabricate a high-performance ultrathin MoTe{sub 2} phototransistor. By introducing an electron tunneling mechanism, electron injection from electrode to channel is strikingly enhanced. The electron mobility approaches 25.2 cm{sup 2} V{sup −1} s{sup −1}, better than that of other back-gated MoTe{sub 2} FETs. Through electrical measurements at various temperatures, the electron tunneling mechanism is further confirmed. The MoTe{sub 2} phototransistor exhibits very high responsivity up to 2560 A/W which is higher than that of most other TMDs. This work may provide guidance to reduce the contact resistance at metal-semiconductor junction and pave a pathway to develop high-performance optoelectronic devices in the future.
Authors:
; ; ; ; ; ; ; ;  [1]
  1. CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190 (China)
Publication Date:
OSTI Identifier:
22492704
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; ELECTRODES; ELECTRON BEAM INJECTION; ELECTRON MOBILITY; MOLYBDENUM TELLURIDES; OPTOELECTRONIC DEVICES; PHOTOTRANSISTORS; SEMICONDUCTOR JUNCTIONS; TRANSITION ELEMENTS; TUNNEL EFFECT