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Title: Graphene/semiconductor silicon modified BiFeO{sub 3}/indium tin oxide ferroelectric photovoltaic device for transparent self-powered windows

We report photovoltaic response of highly transparent graphene/BiFe{sub 0.95}Si{sub 0.05}O{sub 3} (BFSiO)/ITO/glass derived from bottom-up spin coating technique. The device exhibits short-circuit-current (I{sub SC} 0.75 mA) with 1000 fold upsurge and open-circuit-voltage (V{sub OC} ∼ 0.45 V) under standard AM 1.5 illumination through graphene. In combination, I{sub SC} of 0.63 mA and V{sub OC} of 0.35 V for same illumination through ITO, reveals the prospects of harvesting indoor light. Also, crystallographic structure, red shift in band gap, leakage behavior, and ferroelectric characteristics of BFSiO thin films are reported. Reproducible transient response of I{sub SC} and V{sub OC} with quick switching (<100 ms) for 20 consecutive cycles and stability (95%) over test period of 16 weeks signifies high endurance and retentivity, promising for building integrated self-powered windows.
Authors:
; ; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377 (United States)
  2. Physics Department, Miranda House, University of Delhi, Delhi 110007 (India)
  3. Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)
Publication Date:
OSTI Identifier:
22492699
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; BISMUTH COMPOUNDS; CRYSTALLOGRAPHY; CURRENTS; ELECTRIC POTENTIAL; ELECTRICAL FAULTS; FERROELECTRIC MATERIALS; GLASS; GRAPHENE; ILLUMINANCE; INDIUM; IRON OXIDES; PHOTOVOLTAIC EFFECT; RED SHIFT; SEMICONDUCTOR MATERIALS; SILICON; SPIN-ON COATING; STABILITY; THIN FILMS; TIN OXIDES; TRANSIENTS