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Title: Transport properties of AB stacked (Bernal) bilayer graphene on and without substrate within 2- and 4-band approximations

We present the results of the calculations of longitudinal and Hall conductivities of AB-stacked bilayer graphene as a function of frequency, finite chemical potential, temperature both with and without magnetic fields on a base of 2- and 4-band effective models. The limited cases of the conductivities for direct current are derived. The relations being important for optoelectronic among Hall conductivities and Faraday, Kerr angles in the AB-bilayers samples in the electric and magnetic fields when the radiation passes across bilayer sheets on different kinds a substrate are obtained.
Authors:
;  [1] ;  [2]
  1. Bogolyubov Institute for Theoretical Physics, Kiev, 03680 Ukraine (Ukraine)
  2. Institute of Strength Physics and Materials Science SB RAS, Tomsk, 634055 (Russian Federation)
Publication Date:
OSTI Identifier:
22492531
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1683; Journal Issue: 1; Conference: International conference on advanced materials with hierarchical structure for new technologies and reliable structures 2015, Tomsk (Russian Federation), 21-25 Sep 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; APPROXIMATIONS; DIRECT CURRENT; ELECTRIC FIELDS; FREQUENCY DEPENDENCE; GRAPHENE; HALL EFFECT; LAYERS; MAGNETIC FIELDS; SUBSTRATES