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Title: Transport properties of AB stacked (Bernal) bilayer graphene on and without substrate within 2- and 4-band approximations

Abstract

We present the results of the calculations of longitudinal and Hall conductivities of AB-stacked bilayer graphene as a function of frequency, finite chemical potential, temperature both with and without magnetic fields on a base of 2- and 4-band effective models. The limited cases of the conductivities for direct current are derived. The relations being important for optoelectronic among Hall conductivities and Faraday, Kerr angles in the AB-bilayers samples in the electric and magnetic fields when the radiation passes across bilayer sheets on different kinds a substrate are obtained.

Authors:
;  [1];  [2]
  1. Bogolyubov Institute for Theoretical Physics, Kiev, 03680 Ukraine (Ukraine)
  2. Institute of Strength Physics and Materials Science SB RAS, Tomsk, 634055 (Russian Federation)
Publication Date:
OSTI Identifier:
22492531
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1683; Journal Issue: 1; Conference: International conference on advanced materials with hierarchical structure for new technologies and reliable structures 2015, Tomsk (Russian Federation), 21-25 Sep 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; APPROXIMATIONS; DIRECT CURRENT; ELECTRIC FIELDS; FREQUENCY DEPENDENCE; GRAPHENE; HALL EFFECT; LAYERS; MAGNETIC FIELDS; SUBSTRATES

Citation Formats

Gusynin, V. P., E-mail: vgusynin@bitp.kiev.ua, Sharapov, S. G., E-mail: sharapov@bitp.kiev.ua, and Reshetnyak, A. A., E-mail: reshet@ispms.tsc.ru. Transport properties of AB stacked (Bernal) bilayer graphene on and without substrate within 2- and 4-band approximations. United States: N. p., 2015. Web. doi:10.1063/1.4932760.
Gusynin, V. P., E-mail: vgusynin@bitp.kiev.ua, Sharapov, S. G., E-mail: sharapov@bitp.kiev.ua, & Reshetnyak, A. A., E-mail: reshet@ispms.tsc.ru. Transport properties of AB stacked (Bernal) bilayer graphene on and without substrate within 2- and 4-band approximations. United States. https://doi.org/10.1063/1.4932760
Gusynin, V. P., E-mail: vgusynin@bitp.kiev.ua, Sharapov, S. G., E-mail: sharapov@bitp.kiev.ua, and Reshetnyak, A. A., E-mail: reshet@ispms.tsc.ru. 2015. "Transport properties of AB stacked (Bernal) bilayer graphene on and without substrate within 2- and 4-band approximations". United States. https://doi.org/10.1063/1.4932760.
@article{osti_22492531,
title = {Transport properties of AB stacked (Bernal) bilayer graphene on and without substrate within 2- and 4-band approximations},
author = {Gusynin, V. P., E-mail: vgusynin@bitp.kiev.ua and Sharapov, S. G., E-mail: sharapov@bitp.kiev.ua and Reshetnyak, A. A., E-mail: reshet@ispms.tsc.ru},
abstractNote = {We present the results of the calculations of longitudinal and Hall conductivities of AB-stacked bilayer graphene as a function of frequency, finite chemical potential, temperature both with and without magnetic fields on a base of 2- and 4-band effective models. The limited cases of the conductivities for direct current are derived. The relations being important for optoelectronic among Hall conductivities and Faraday, Kerr angles in the AB-bilayers samples in the electric and magnetic fields when the radiation passes across bilayer sheets on different kinds a substrate are obtained.},
doi = {10.1063/1.4932760},
url = {https://www.osti.gov/biblio/22492531}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1683,
place = {United States},
year = {Tue Oct 27 00:00:00 EDT 2015},
month = {Tue Oct 27 00:00:00 EDT 2015}
}