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Title: The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior

The III-Nitrides are promising candidate for high efficiency thermoelectric (TE) materials and devices due to their unique features which includes high thermal stability. A systematic study of the room temperature TE properties of metalorganic chemical vapor deposition grown In{sub x}Ga{sub 1-x}N were investigated for x =  0.07 to 0.24. This paper investigated the role of indium composition on the TE properties of InGaN alloys in particular the structural properties for homogenous material that did not show significant phase separation. The highest Seebeck and power factor values of 507 μV K{sup −1} and 21.84 × 10{sup −4} Wm{sup −1}K{sup −1} were observed, respectively for In{sub 0.07}Ga{sub 0.93}N at room temperature. The highest value of figure-of-merit (ZT) was calculated to be 0.072 for In{sub 0.20}Ga{sub 0.80}N alloy at room temperature.
Authors:
;  [1] ; ;  [2] ;  [3] ;  [4]
  1. Lyles School of Civil Engineering, Purdue University, West Lafayette, IN 47907 (United States)
  2. Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States)
  3. Institute of Semiconductors, Chinese Academy of Science, Beijing (China)
  4. College of Engineering and Computing, Missouri University of Science and Technology, Rolla, MO 65409 (United States)
Publication Date:
OSTI Identifier:
22492440
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDES; INDIUM COMPOUNDS; NITRIDES; ORGANOMETALLIC COMPOUNDS; PHASE STABILITY; POWER FACTOR; SEEBECK EFFECT; TEMPERATURE RANGE 0273-0400 K; THERMOELECTRIC MATERIALS