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Title: Reverse degradation of nickel graphene junction by hydrogen annealing

Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel graphene junction degrades after air exposure, due to interfacial oxidation, thus creating a tunneling barrier. Most importantly, we demonstrate that hydrogen annealing at moderate temperature (300 {sup 0}C) is an effective technique to reverse the degradation.
Authors:
; ; ; ;  [1]
  1. College of Nanoscience and Engineering, SUNY Polytechnic Institute, Albany, NY USA 12203 (United States)
Publication Date:
OSTI Identifier:
22492438
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ELECTRIC CONDUCTIVITY; FABRICATION; GRAPHENE; HYDROGEN; INTERFACES; NICKEL; OXIDATION; SEMICONDUCTOR JUNCTIONS; TUNNEL EFFECT; VARIATIONS