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Title: Photocurrent response of B{sub 12}As{sub 2} crystals to blue light, and its temperature- dependent electrical characterizations

With the global shortage of {sup 3}He gas, researchers worldwide are looking for alternative materials for detecting neutrons. Among the candidate materials, semiconductors are attractive because of their light weight and ease in handling. Currently, we are looking into the suitability of boron arsenide (B{sub 12}As{sub 2}) for this specific application. As the first step in evaluating the material qualitatively, the photo-response of B{sub 12}As{sub 2} bulk crystals to light with different wavelengths was examined. The crystals showed photocurrent response to a band of 407- and 470- nm blue light. The maximum measured photoresponsivity and the photocurrent density at 0.7 V for 470 nm blue light at room temperature were 0.25 A ⋅ W{sup −1} and 2.47 mA ⋅ cm{sup −2}, respectively. In addition to photo current measurements, the electrical properties as a function of temperature (range: 50-320 K) were measured. Reliable data were obtained for the low-temperature I-V characteristics, the temperature dependence of dark current and its density, and the resistivity variations with temperature in B{sub 12}As{sub 2} bulk crystals. The experiments showed an exponential dependence on temperature for the dark current, current density, and resistivity; these three electrical parameters, respectively, had a variation of a few nA tomore » μA, 1-100 μA ⋅ cm{sup −2} and 7.6x10{sup 5}-7.7x10{sup 3} Ω ⋅ cm, for temperature increasing from 50 K to 320 K. The results from this study reported the first photoresponse and demonstrated that B{sub 12}As{sub 2} is a potential candidate for thermal-neutron detectors.« less
Authors:
 [1] ;  [2] ; ; ; ; ; ; ;  [1] ;  [3] ; ;  [4]
  1. Brookhaven National Laboratory, Upton, NY, 11973 (United States)
  2. (United States)
  3. Alabama A&M University, Normal AL, 35762 (United States)
  4. Kansas State University, Manhattan, KS, 66506 (United States)
Publication Date:
OSTI Identifier:
22492437
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON; BORON ARSENIDES; CRYSTALS; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; HELIUM 3; PHOTOCURRENTS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; THERMAL NEUTRONS; VISIBLE RADIATION