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Title: Band alignment of TiO{sub 2}/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

The energy band alignment between pulsed-laser-deposited TiO{sub 2} and FTO was firstly characterized using high-resolution X-ray photoelectron spectroscopy. A valence band offset (VBO) of 0.61 eV and a conduction band offset (CBO) of 0.29 eV were obtained across the TiO{sub 2}/FTO heterointerface. With annealing process, the VBO and CBO across the heterointerface were found to be -0.16 eV and 1.06 eV, respectively, with the alignment transforming from type-I to type-II. The difference in the band alignment is believed to be dominated by the core level down-shift of the FTO substrate, which is a result of the oxidation of Sn. Current-voltage test has verified that the band alignment has a significant effect on the current transport of the heterojunction.
Authors:
 [1] ;  [2] ; ; ;  [1] ;  [1] ;  [2] ;  [1] ;  [2]
  1. Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22492420
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALIGNMENT; ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; EV RANGE; FLUORINE COMPOUNDS; HETEROJUNCTIONS; INTERFACES; LASER RADIATION; OXIDATION; RESOLUTION; SUBSTRATES; TITANIUM OXIDES; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY