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Title: Broadband terahertz generation using the semiconductor-metal transition in VO{sub 2}

We report the design, fabrication, and characterization of broadband terahertz emitters based on the semiconductor-metal transition in thin film VO{sub 2} (vanadium dioxide). With the appropriate geometry, picosecond electrical pulses are generated by illuminating 120 nm thick VO{sub 2} with 280 fs pulses from a femtosecond laser. These ultrafast electrical pulses are used to drive a simple dipole antenna, generating broadband terahertz radiation.
Authors:
; ; ;  [1]
  1. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, DC, 20375 (United States)
Publication Date:
OSTI Identifier:
22492400
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTENNAS; DIPOLES; ELECTROMAGNETIC PULSES; FABRICATION; LASER RADIATION; METALS; SEMICONDUCTOR MATERIALS; THIN FILMS; THZ RANGE; VANADIUM OXIDES