Broadband terahertz generation using the semiconductor-metal transition in VO{sub 2}

Journal Article · Fri Jan 15 00:00:00 EST 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4941042· OSTI ID:22492400

Kim, Heungsoo; Mathews, Scott A.; Piqué, Alberto ^[1]

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1. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, DC, 20375 (United States)

We report the design, fabrication, and characterization of broadband terahertz emitters based on the semiconductor-metal transition in thin film VO{sub 2} (vanadium dioxide). With the appropriate geometry, picosecond electrical pulses are generated by illuminating 120 nm thick VO{sub 2} with 280 fs pulses from a femtosecond laser. These ultrafast electrical pulses are used to drive a simple dipole antenna, generating broadband terahertz radiation.

• OSTI ID: 22492400
• Journal Information: AIP Advances, Vol. 6, Issue 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTENNAS
DIPOLES
ELECTROMAGNETIC PULSES
FABRICATION
LASER RADIATION
METALS
SEMICONDUCTOR MATERIALS
THIN FILMS
THZ RANGE
VANADIUM OXIDES