Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

Journal Article · Fri Jan 15 00:00:00 EST 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4939939· OSTI ID:22492398

Kim, Junghwan; Miyokawa, Norihiko; Ide, Keisuke ^[1]; Toda, Yoshitake ^[2]; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio ^[1]

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1. Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan)
2. Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan)

We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

• OSTI ID: 22492398
• Journal Information: AIP Advances, Vol. 6, Issue 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
ELECTRONIC STRUCTURE
EMISSION SPECTRA
EXCITED STATES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
OXYGEN
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
VISIBLE RADIATION
ZINC OXIDES