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Title: Intersubband energies in strain-compensated InGaN/AlInN quantum well structures

Intersubband transition energies in the conduction band for strain-compensated InGaN/AlInN quantum well (QW) structures were investigated as a function of strain based on an effective mass theory with the nonparabolicity taken into account. In the case of an InGaN/AlInN QW structure lattice-matched to GaN, the wavelength is shown to be longer than 1.55 μm. On the other hand, strain-compensated QW structures show that the wavelength of 1.55 μm can be reached even for the QW structure with a relatively small strain of 0.3 %. Hence, the strain-compensated QW structures can be used for telecommunication applications at 1.55 μm with a small strain, compared to conventional GaN/AlN QW structure.
Authors:
 [1] ;  [2]
  1. Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk, 712-702 (Korea, Republic of)
  2. Institute of Quantum Information Processing and Systems, University of Seoul, 90 Jeonnong, Tongdaimoon-Gu, Seoul, Korea 130-743 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22492390
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; COMPARATIVE EVALUATIONS; CRYSTAL LATTICES; EFFECTIVE MASS; ELECTRONIC STRUCTURE; GALLIUM NITRIDES; INDIUM COMPOUNDS; QUANTUM WELLS; STRAINS; WAVELENGTHS