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Title: Electronic states in spherical GaN nanocrystals embedded in various dielectric matrices: The k ⋅ p-calculations

Using the envelope-function approximation, the single-particle states of electrons and holes in spherical GaN nanocrystals embedded in different amorphous dielectric matrices (SiO{sub 2}, Al{sub 2}O{sub 3}, HfO{sub 2} and Si{sub 3}N{sub 4}) have been calculated. Ground state energies of electrons and holes in GaN nanocrystals are determined using the isotropic approximation of the k ⋅ p -Hamiltonian. All the ground state energies are found to increase with lowering the nanocrystal size and are proportional to the R{sup −n}, where R is the nanocrystal radius, n =1.5-1.9 for electrons and 1.7-2.0 for holes. The optical gap of GaN nanocrystals changes from 3.8 to 5 eV for the nanocrystal radius ranging from 3 to 1 nm.
Authors:
; ; ; ; ;  [1] ;  [2]
  1. Lobachevsky University, Nizhny Novgorod 603950 (Russian Federation)
  2. Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur 342011 (India)
Publication Date:
OSTI Identifier:
22492388
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; AMORPHOUS STATE; DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; ELECTRONS; ENERGY GAP; EV RANGE; GALLIUM NITRIDES; GROUND STATES; HAFNIUM OXIDES; HAMILTONIANS; HOLES; MATRIX MATERIALS; NANOSTRUCTURES; SILICON NITRIDES; SILICON OXIDES