skip to main content

Title: Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

We report internal quantum efficiency enhancement of thin p-GaN green quantum-well structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density on the enhancement factor is investigated. We obtain an internal quantum efficiency enhancement by a factor of 2.3 at 756 W/cm{sup 2}, and a factor of 8.1 at 1 W/cm{sup 2}. A Purcell enhancement up to a factor of 26 is estimated by fitting the experimental results to a theoretical model for the efficiency enhancement factor.
Authors:
 [1] ;  [2] ;  [3] ; ; ; ;  [4] ;  [4] ;  [5] ; ; ;  [6] ;  [6] ;  [3]
  1. Department of Applied Physics, Tokyo University of Science, Katsushika, 125-8585 Tokyo (Japan)
  2. (Denmark)
  3. (Japan)
  4. Department of Photonics Engineering, Technical University of Denmark, 2800 Lyngby (Denmark)
  5. (China)
  6. Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi Tempaku, 468-8502 Nagoya (Japan)
Publication Date:
OSTI Identifier:
22492367
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 9; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; EXCITATION; GALLIUM NITRIDES; GOLD; NANOPARTICLES; PHOTOLUMINESCENCE; POWER DENSITY; P-TYPE CONDUCTORS; QUANTUM EFFICIENCY; QUANTUM WELLS; TEMPERATURE DEPENDENCE