Annealing effects on recombinative activity of nickel at direct silicon bonded interface

Kojima, Takuto; Ohshita, Yoshio; Yamaguchi, Masafumi

doi:10.1063/1.4931083

Title: Annealing effects on recombinative activity of nickel at direct silicon bonded interface

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Abstract

By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence band, trap density of states, and hole capture cross section peaked at an annealing temperature of 300 °C. At temperatures ⩾400 °C, the hole capture cross section increased with temperature, but the density of states remained unchanged. Further, synchrotron-based X-ray analyses, microprobe X-ray fluorescence (μ-XRF), and X-ray absorption near edge structure (XANES) analyses were performed. The analysis results indicated that the chemical phase after the sample was annealed at 200 °C was a mixture of NiO and NiSi{sub 2}.

Authors:

Kojima, Takuto; Ohshita, Yoshio; Yamaguchi, Masafumi ^[1]

Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya, 468-8511 (Japan)

Publication Date:: Tue Sep 15 00:00:00 EDT 2015

OSTI Identifier:: 22492354

Resource Type:: Journal Article

Journal Name:: AIP Advances

Additional Journal Information:: Journal Volume: 5; Journal Issue: 9; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; ANNEALING; CAPACITANCE; DENSITY OF STATES; FLUORESCENCE; GRAIN BOUNDARIES; HOLES; INTERFACES; NICKEL; NICKEL OXIDES; NICKEL SILICIDES; RECOMBINATION; SILICON; TRANSIENTS; TRAPS; VALENCE; X-RAY FLUORESCENCE ANALYSIS; X-RAY SPECTROSCOPY

Citation Formats


                    Kojima, Takuto, Ohshita, Yoshio, and Yamaguchi, Masafumi. Annealing effects on recombinative activity of nickel at direct silicon bonded interface.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4931083.

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                    Kojima, Takuto, Ohshita, Yoshio, & Yamaguchi, Masafumi. Annealing effects on recombinative activity of nickel at direct silicon bonded interface.  United States.  https://doi.org/10.1063/1.4931083

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                    Kojima, Takuto, Ohshita, Yoshio, and Yamaguchi, Masafumi. 2015.  
        "Annealing effects on recombinative activity of nickel at direct silicon bonded interface".  United States.  https://doi.org/10.1063/1.4931083.

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@article{osti_22492354,

  title        = {Annealing effects on recombinative activity of nickel at direct silicon bonded interface},

  author       = {Kojima, Takuto and Ohshita, Yoshio and Yamaguchi, Masafumi},

  abstractNote = {By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence band, trap density of states, and hole capture cross section peaked at an annealing temperature of 300 °C. At temperatures ⩾400 °C, the hole capture cross section increased with temperature, but the density of states remained unchanged. Further, synchrotron-based X-ray analyses, microprobe X-ray fluorescence (μ-XRF), and X-ray absorption near edge structure (XANES) analyses were performed. The analysis results indicated that the chemical phase after the sample was annealed at 200 °C was a mixture of NiO and NiSi{sub 2}.},

  doi          = {10.1063/1.4931083},

  url          = {https://www.osti.gov/biblio/22492354},
  journal      = {AIP Advances},

  issn         = {2158-3226},

  number       = 9,

  volume       = 5,

  place        = {United States},

  year         = {Tue Sep 15 00:00:00 EDT 2015},

  month        = {Tue Sep 15 00:00:00 EDT 2015}

}

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