skip to main content

SciTech ConnectSciTech Connect

Title: Annealing effects on recombinative activity of nickel at direct silicon bonded interface

By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence band, trap density of states, and hole capture cross section peaked at an annealing temperature of 300 °C. At temperatures ⩾400 °C, the hole capture cross section increased with temperature, but the density of states remained unchanged. Further, synchrotron-based X-ray analyses, microprobe X-ray fluorescence (μ-XRF), and X-ray absorption near edge structure (XANES) analyses were performed. The analysis results indicated that the chemical phase after the sample was annealed at 200 °C was a mixture of NiO and NiSi{sub 2}.
Authors:
; ;  [1]
  1. Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya, 468-8511 (Japan)
Publication Date:
OSTI Identifier:
22492354
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 9; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; ANNEALING; CAPACITANCE; DENSITY OF STATES; FLUORESCENCE; GRAIN BOUNDARIES; HOLES; INTERFACES; NICKEL; NICKEL OXIDES; NICKEL SILICIDES; RECOMBINATION; SILICON; TRANSIENTS; TRAPS; VALENCE; X-RAY FLUORESCENCE ANALYSIS; X-RAY SPECTROSCOPY