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Title: Electromechanical resistive switching via back-to-back Schottky junctions

The physics of the electromechanical resistive switching is uncovered using the theory of back-to-back Schottky junctions combined with the quantum domain space charge transport. A theoretical model of the basic element of resistive switching devices realized by the metal-ZnO nanowires-metal structure has been created and analyzed. Simulation results show that the reverse biased Schottky junction and the air gap impedance dominate the current-voltage relation at higher external voltages; thereby electromechanically varying the air gap thickness causes the device exhibit resistive tuning characteristics. As the device dimension is in nanometre scale, investigation of the model based on quantum mechanics has also been conducted.
Authors:
 [1]
  1. College of Engineering, Swansea University, Swansea, SA2 8PP (United Kingdom)
Publication Date:
OSTI Identifier:
22492353
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 9; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC CONDUCTIVITY; IMPEDANCE; METALS; NANOWIRES; QUANTUM MECHANICS; SEMICONDUCTOR JUNCTIONS; TUNING; ZINC OXIDES