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Title: Effect of the intra-layer potential distributions and spatial currents on the performance of graphene SymFETs

In this paper, a two-dimensional (2-D) model for a graphene symmetric field effect transistor (SymFET), which considers (a) the intra-graphene layer potential distributions and (b) the internal current flows through the device, is presented and discussed. The local voltages along the graphene electrodes as well as the current-voltage characteristics of the device are numerically calculated based on a single-particle tunneling model. Our numerical results show that: (i) when the tunneling current is small, due to either a large tunneling thickness (≥ 2 atomic layers of BN) or a small coherence length, the voltage distributions along the graphene electrodes have almost zero variations upon including these distributed effects, (ii) when the tunnel current is large, due to either a small tunneling thickness (∼ 1 atomic layer of BN) or due to a large coherence length, the local voltage distributions along the graphene electrodes become appreciable and the device behavior deviates from that predicted by a 1-D approximation. These effects, which are not captured in one-dimensional SymFET models, can provide a better understanding about the electron dynamics in the device and might indicate potential novel applications for this proposed device.
Authors:
;  [1]
  1. Department of Electrical and Computer Engineering, The University of Utah, Salt Lake City, Utah 84112 (United States)
Publication Date:
OSTI Identifier:
22492339
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 9; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON NITRIDES; COHERENCE LENGTH; ELECTRIC POTENTIAL; ELECTRODES; ELECTRONS; FIELD EFFECT TRANSISTORS; GRAPHENE; LAYERS; PERFORMANCE; POTENTIALS; TUNNEL EFFECT; TWO-DIMENSIONAL SYSTEMS