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Title: Comparative study on the charge-trapping properties of TaAlO and ZrAlO high-k composites with designed band alignment

The charge-trapping memory (CTM) structures Pt/Al{sub 2}O{sub 3}/TaAlO/Al{sub 2}O{sub 3}/p-Si and Pt/Al{sub 2}O{sub 3}/ZrAlO/Al{sub 2}O{sub 3}/p-Si were fabricated by using rf-sputtering and atomic layer deposition techniques, in which the potentials at the bottom of the conduction band (PBCB) of high-k composites TaAlO and ZrAlO were specially designed. With a lower PBCB difference between TaAlO and p-Si than that between ZrAlO and p-Si, TaAlO CTM device shows a better charge-trapping performance. A density of trapped charges 2.88 × 10{sup 13}/cm{sup 2} at an applied voltage of ±7 V was obtained for TaAlO CTM device, and it could keep about 60% of initially trapped charges after 10 years. It was suggested that the PBCB difference between high-k composite and p-Si dominates their charge-trapping behaviors.
Authors:
; ; ; ; ; ; ; ; ; ;  [1]
  1. National Laboratory of Solid State Microstructures and College of Engineering and Applied Science, Nanjing University, Nanjing 210093 (China)
Publication Date:
OSTI Identifier:
22492322
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 8; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALIGNMENT; ALUMINIUM OXIDES; HETEROJUNCTIONS; INTERFACES; PERFORMANCE; PLATINUM; POTENTIALS; P-TYPE CONDUCTORS; SILICON; SPUTTERING; TANTALUM COMPOUNDS; TRAPPING; ZIRCONIUM COMPOUNDS