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Title: Experimental estimation of oxidation-induced Si atoms emission on Si(001) surfaces

Kinetics of Si atoms emission during the oxidation of Si(001) surfaces have been investigated using reflection high energy electron diffraction combined with Auger electron spectroscopy. The area ratio of the 1 × 2 and the 2 × 1 domains on a clean Si(001) surface changed with the oxidation of the surface by Langmuir-type adsorption. This change in the domain ratio is attributed to the emission of Si atoms. We can describe the changes in the domain ratio using the Si emission kinetics model, which states that (1) the emission rate is proportional to the oxide coverage, and (2) the emitted Si atoms migrate on the surface and are trapped at S{sub B} steps. Based on our model, we find experimentally that up to 0.4 ML of Si atoms are emitted during the oxidation of a Si(001) surface at 576 °C.
Authors:
; ;  [1]
  1. Institute Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577 (Japan)
Publication Date:
OSTI Identifier:
22492317
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 8; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ADSORPTION; ATOMS; AUGER ELECTRON SPECTROSCOPY; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; EMISSION; OXIDATION; REFLECTION; SILICON; SILICON OXIDES; SURFACES; TRAPPING