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Title: Low contact resistance in epitaxial graphene devices for quantum metrology

We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001) for applications in quantum resistance metrology. Using three-terminal measurements in the quantum Hall regime we observed variations in contact resistances ranging from a minimal value of 0.6 Ω up to 11 kΩ. We identify a major source of high-resistance contacts to be due bilayer graphene interruptions to the quantum Hall current, whilst discarding the effects of interface cleanliness and contact geometry for our fabricated devices. Moreover, we experimentally demonstrate methods to improve the reproducibility of low resistance contacts (<10 Ω) suitable for high precision quantum resistance metrology.
Authors:
; ; ;  [1] ;  [2] ;  [3] ; ;  [4] ;  [4] ;  [5] ; ;  [6]
  1. Department of Microtechnology and Nanoscience, Chalmers University of Technology Göteborg, S-412 96 (Sweden)
  2. School of Physics, University of New South Wales, Sydney, NSW-2052 (Australia)
  3. Department of Physics, Chemistry and Biology (IFM), Linköping University Linköping, S-581 83 (Sweden)
  4. National Physical Laboratory, Teddington, TW11 0LW (United Kingdom)
  5. (United Kingdom)
  6. Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22492310
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 8; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; EPITAXY; GOLD; GRAPHENE; HALL EFFECT; INTERFACES; LAYERS; SILICON CARBIDES; TITANIUM; VARIATIONS