skip to main content

Title: Observations on Si-based micro-clusters embedded in TaN thin film deposited by co-sputtering with oxygen contamination

Using scanning electron microscopy (SEM) and high-resolution x-ray photoelectron spectroscopy with the synchrotron radiation we investigated Si-based micro-clusters embedded in TaSiN thin films having oxygen contamination. TaSiN thin films were deposited by co-sputtering on fixed or rotated substrates and with various power conditions of TaN and Si targets. Three types of embedded micro-clusters with the chemical states of pure Si, SiO{sub x}-capped Si, and SiO{sub 2}-capped Si were observed and analyzed using SEM and Si 2p and Ta 4f core-level spectra were derived. Their different resistivities are presumably due to the different chemical states and densities of Si-based micro-clusters.
Authors:
 [1] ; ;  [2] ;  [3]
  1. Beamline Division, Pohang Accelerator Laboratory, POSTECH, Pohang, 305-764 (Korea, Republic of)
  2. Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
  3. Energy Materials and Surface Sciences Unit, Okinawa Institute of Science and Technology Graduate University, Okinawa, 904-0495 (Japan)
Publication Date:
OSTI Identifier:
22492308
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 8; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL STATE; ELECTRIC CONDUCTIVITY; OXYGEN; RESOLUTION; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON; SILICON OXIDES; SOLID CLUSTERS; SPUTTERING; SUBSTRATES; SYNCHROTRON RADIATION; TANTALUM NITRIDES; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY