Observations on Si-based micro-clusters embedded in TaN thin film deposited by co-sputtering with oxygen contamination

Journal Article · Sat Aug 15 00:00:00 EDT 2015 · AIP Advances

DOI:https://doi.org/10.1063/1.4928576· OSTI ID:22492308

Lee, Young Mi ^[1]; Jung, Min-Sang; Choi, Duck-Kyun ^[2]; Jung, Min-Cherl ^[3]

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1. Beamline Division, Pohang Accelerator Laboratory, POSTECH, Pohang, 305-764 (Korea, Republic of)
2. Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
3. Energy Materials and Surface Sciences Unit, Okinawa Institute of Science and Technology Graduate University, Okinawa, 904-0495 (Japan)

Using scanning electron microscopy (SEM) and high-resolution x-ray photoelectron spectroscopy with the synchrotron radiation we investigated Si-based micro-clusters embedded in TaSiN thin films having oxygen contamination. TaSiN thin films were deposited by co-sputtering on fixed or rotated substrates and with various power conditions of TaN and Si targets. Three types of embedded micro-clusters with the chemical states of pure Si, SiO{sub x}-capped Si, and SiO{sub 2}-capped Si were observed and analyzed using SEM and Si 2p and Ta 4f core-level spectra were derived. Their different resistivities are presumably due to the different chemical states and densities of Si-based micro-clusters.

• OSTI ID: 22492308
• Journal Information: AIP Advances, Vol. 5, Issue 8; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL STATE
ELECTRIC CONDUCTIVITY
OXYGEN
RESOLUTION
SCANNING ELECTRON MICROSCOPY
SILICA
SILICON
SILICON OXIDES
SOLID CLUSTERS
SPUTTERING
SUBSTRATES
SYNCHROTRON RADIATION
TANTALUM NITRIDES
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY