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Title: Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

Device white noise levels in short channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) dictate the performance and reliability of high-frequency circuits ranging from high-speed microprocessors to Low-Noise Amplifiers (LNAs) and microwave circuits. Recent experimental noise measurements with very short devices demonstrate the existence of suppressed shot noise, contrary to the predictions of classical channel thermal noise models. In this work we show that, as the dimensions continue to shrink, shot noise has to be considered when the channel resistance becomes comparable to the barrier resistance at the source-channel junction. By adopting a semi-classical approach and taking retrospectively into account transport, short-channel and quantum effects, we investigate the partitioning between shot and thermal noise, and formulate a predictive model that describes the noise characteristics of modern devices.
Authors:
; ;  [1]
  1. Department of Electrical and Computer Engineering, University of Patras, Patras 26500 (Greece)
Publication Date:
OSTI Identifier:
22492296
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 8; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMPLIFIERS; COMPARATIVE EVALUATIONS; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; METALS; MICROPROCESSORS; MICROWAVE RADIATION; MOSFET; NOISE; OXIDES; PERFORMANCE; RELIABILITY; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; VELOCITY