skip to main content

Title: Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO{sub 2} electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO{sub 2} electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.
Authors:
; ;  [1] ;  [2]
  1. Micro/Nano Science & Technology Center, Jiangsu University, Zhenjiang, 212013 (China)
  2. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)
Publication Date:
OSTI Identifier:
22492295
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 8; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIELECTRIC MATERIALS; DOPED MATERIALS; ELECTROLYTES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; NEURAL NETWORKS; PHOSPHORUS COMPOUNDS; PROTONS; SILICA; SILICON OXIDES; TEMPERATURE DEPENDENCE; TRANSISTORS; ZINC OXIDES