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Title: Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films

Optical switches offer higher switching speeds than electronics, however, in most cases utilizing the interband transitions of the active medium for switching. As a result, the signal suffers heavy losses. In this article, we demonstrate a simple and yet efficient ultrafast broadband all-optical switching on ps timescale in the sub-bandgap region of the a-Se thin film, where the intrinsic absorption is very weak. The optical switching is attributed to short-lived transient defects that form localized states in the bandgap and possess a large electron-phonon coupling. We model these processes through first principles simulation that are in agreement with the experiments.
Authors:
;  [1] ; ;  [2]
  1. Department of Physics, Indian Institute of Science Education and Research, Bhopal 462066 (India)
  2. Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701 (United States)
Publication Date:
OSTI Identifier:
22492268
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 7; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; COMPUTERIZED SIMULATION; ELECTRONIC STRUCTURE; ELECTRON-PHONON COUPLING; ENERGY GAP; ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; SELENIUM; THIN FILMS; TRANSIENTS; VELOCITY