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Title: Ab-initio calculation study on the formation mechanism of boron-oxygen complexes in c-Si

Boron-oxygen (B-O) complex in crystalline silicon (c-Si) solar cells is responsible for the light-induced efficiency degradation of solar cell. However, the formation mechanism of B-O complex is not clear yet. By Ab-initio calculation, it is found that the stagger-type oxygen dimer (O{sub 2i}{sup st}) should be the component of B-O complex, whose movement occurs through its structure reconfiguration at low temperature, instead of its long-distance diffusion. The O{sub 2i}{sup st} can form two stable “latent centers” with the B{sub s}, which are recombination-inactive. The latent centers can be evolved into the metastable recombination centers via their structure transformation in the presence of excess carriers. These results can well explain the formation behaviors of B-O complexes in c-Si.
Authors:
; ; ; ;  [1]
  1. State Key Laboratory of Silicon Materials and Department of Materials Science & Engineering, Zhejiang University, Hangzhou 310027 (China)
Publication Date:
OSTI Identifier:
22492262
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 7; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON; BORON COMPLEXES; CHARGE CARRIERS; DIFFUSION; DIMERS; OXYGEN; OXYGEN COMPLEXES; RECOMBINATION; SILICON; SILICON SOLAR CELLS; TEMPERATURE DEPENDENCE; VISIBLE RADIATION