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Title: Ab-initio calculation study on the formation mechanism of boron-oxygen complexes in c-Si

Abstract

Boron-oxygen (B-O) complex in crystalline silicon (c-Si) solar cells is responsible for the light-induced efficiency degradation of solar cell. However, the formation mechanism of B-O complex is not clear yet. By Ab-initio calculation, it is found that the stagger-type oxygen dimer (O{sub 2i}{sup st}) should be the component of B-O complex, whose movement occurs through its structure reconfiguration at low temperature, instead of its long-distance diffusion. The O{sub 2i}{sup st} can form two stable “latent centers” with the B{sub s}, which are recombination-inactive. The latent centers can be evolved into the metastable recombination centers via their structure transformation in the presence of excess carriers. These results can well explain the formation behaviors of B-O complexes in c-Si.

Authors:
; ; ; ;  [1]
  1. State Key Laboratory of Silicon Materials and Department of Materials Science & Engineering, Zhejiang University, Hangzhou 310027 (China)
Publication Date:
OSTI Identifier:
22492262
Resource Type:
Journal Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 5; Journal Issue: 7; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON; BORON COMPLEXES; CHARGE CARRIERS; DIFFUSION; DIMERS; OXYGEN; OXYGEN COMPLEXES; RECOMBINATION; SILICON; SILICON SOLAR CELLS; TEMPERATURE DEPENDENCE; VISIBLE RADIATION

Citation Formats

Yu, Xuegong, Chen, Peng, Chen, Xianzi, Liu, Yong, and Yang, Deren. Ab-initio calculation study on the formation mechanism of boron-oxygen complexes in c-Si. United States: N. p., 2015. Web. doi:10.1063/1.4927498.
Yu, Xuegong, Chen, Peng, Chen, Xianzi, Liu, Yong, & Yang, Deren. Ab-initio calculation study on the formation mechanism of boron-oxygen complexes in c-Si. United States. https://doi.org/10.1063/1.4927498
Yu, Xuegong, Chen, Peng, Chen, Xianzi, Liu, Yong, and Yang, Deren. 2015. "Ab-initio calculation study on the formation mechanism of boron-oxygen complexes in c-Si". United States. https://doi.org/10.1063/1.4927498.
@article{osti_22492262,
title = {Ab-initio calculation study on the formation mechanism of boron-oxygen complexes in c-Si},
author = {Yu, Xuegong and Chen, Peng and Chen, Xianzi and Liu, Yong and Yang, Deren},
abstractNote = {Boron-oxygen (B-O) complex in crystalline silicon (c-Si) solar cells is responsible for the light-induced efficiency degradation of solar cell. However, the formation mechanism of B-O complex is not clear yet. By Ab-initio calculation, it is found that the stagger-type oxygen dimer (O{sub 2i}{sup st}) should be the component of B-O complex, whose movement occurs through its structure reconfiguration at low temperature, instead of its long-distance diffusion. The O{sub 2i}{sup st} can form two stable “latent centers” with the B{sub s}, which are recombination-inactive. The latent centers can be evolved into the metastable recombination centers via their structure transformation in the presence of excess carriers. These results can well explain the formation behaviors of B-O complexes in c-Si.},
doi = {10.1063/1.4927498},
url = {https://www.osti.gov/biblio/22492262}, journal = {AIP Advances},
issn = {2158-3226},
number = 7,
volume = 5,
place = {United States},
year = {Wed Jul 15 00:00:00 EDT 2015},
month = {Wed Jul 15 00:00:00 EDT 2015}
}