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Title: Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

We report on GaN based field-effect transistor (FET) structures exhibiting sheet carrier densities of n = 2.9 10{sup 13} cm{sup −2} for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally x{sub In} = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the In{sub x}Ga{sub 1−x}N/GaN/AlN/Al{sub 0.87}In{sub 0.13}N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of I{sub SD} = 1300 mA/mm (560 mA/mm). In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.
Authors:
; ; ; ; ; ;  [1]
  1. Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg (Germany)
Publication Date:
OSTI Identifier:
22492256
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 7; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; CARRIER DENSITY; COMPUTERIZED SIMULATION; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM NITRIDES; INTERFACES; LAYERS; LEAKAGE CURRENT; POLARIZATION; SHEETS