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Title: High dislocation density of tin induced by electric current

A dislocation density of as high as 10{sup 17} /m{sup 2} in a tin strip, as revealed by high resolution transmission electron microscope, was induced by current stressing at 6.5 x 10{sup 3} A/ cm{sup 2}. The dislocations exist in terms of dislocation line, dislocation loop, and dislocation aggregates. Electron Backscattered Diffraction images reflect that the high dislocation density induced the formation of low deflection angle subgrains, high deflection angle Widmanstätten grains, and recrystallization. The recrystallization gave rise to grain refining.
Authors:
; ;  [1] ;  [2]
  1. Department of Material Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R. O. C (China)
  2. Department of Chemical and Material Engineering, National Central University, Jhongli 32001, Taiwan, R. O. C (China)
Publication Date:
OSTI Identifier:
22492239
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 12; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DENSITY; DISLOCATIONS; ELECTRIC CURRENTS; ELECTRON DIFFRACTION; RECRYSTALLIZATION; RESOLUTION; STRESSES; TIN; TRANSMISSION ELECTRON MICROSCOPY