Enhanced UV detection by non-polar epitaxial GaN films
Abstract
Nonpolar a-GaN (11-20) epilayers were grown on r-plane (1-102) sapphire substrates using plasma assisted molecular beam epitaxy. High resolution x-ray diffractometer confirmed the orientation of the grown film. Effect of the Ga/N ratio on the morphology and strain of a-GaN epilayers was compared and the best condition was obtained for the nitrogen flow of 1 sccm. Atomic force microscopy was used to analyze the surface morphology while the strain in the film was quantitatively measured using Raman spectroscopy and qualitatively analyzed by reciprocal space mapping technique. UV photo response of a-GaN film was measured after fabricating a metal-semiconductor-metal structure over the film with gold metal. The external quantum efficiency of the photodetectors fabricated in the (0002) polar and (11-20) nonpolar growth directions were compared in terms of responsivity and nonpolar GaN showed the best sensitivity at the cost of comparatively slow response time.
- Authors:
-
- Materials Research Centre, Indian Institute of Science, Bangalore (India)
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore (India)
- Publication Date:
- OSTI Identifier:
- 22492237
- Resource Type:
- Journal Article
- Journal Name:
- AIP Advances
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 12; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; COMPARATIVE EVALUATIONS; FILMS; GALLIUM NITRIDES; GOLD; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITROGEN; PHOTODETECTORS; QUANTUM EFFICIENCY; RAMAN SPECTROSCOPY; SAPPHIRE; SEMICONDUCTOR MATERIALS; STRAINS; SUBSTRATES; SURFACES; X-RAY DIFFRACTION
Citation Formats
Mukundan, Shruti, Chandan, Greeshma, Mohan, Lokesh, Krupanidhi, S. B., E-mail: sbk@mrc.iisc.ernet.in, Roul, Basanta, Central Research Laboratory, Bharat Electronics, Bangalore, and Shetty, Arjun. Enhanced UV detection by non-polar epitaxial GaN films. United States: N. p., 2015.
Web. doi:10.1063/1.4937742.
Mukundan, Shruti, Chandan, Greeshma, Mohan, Lokesh, Krupanidhi, S. B., E-mail: sbk@mrc.iisc.ernet.in, Roul, Basanta, Central Research Laboratory, Bharat Electronics, Bangalore, & Shetty, Arjun. Enhanced UV detection by non-polar epitaxial GaN films. United States. https://doi.org/10.1063/1.4937742
Mukundan, Shruti, Chandan, Greeshma, Mohan, Lokesh, Krupanidhi, S. B., E-mail: sbk@mrc.iisc.ernet.in, Roul, Basanta, Central Research Laboratory, Bharat Electronics, Bangalore, and Shetty, Arjun. 2015.
"Enhanced UV detection by non-polar epitaxial GaN films". United States. https://doi.org/10.1063/1.4937742.
@article{osti_22492237,
title = {Enhanced UV detection by non-polar epitaxial GaN films},
author = {Mukundan, Shruti and Chandan, Greeshma and Mohan, Lokesh and Krupanidhi, S. B., E-mail: sbk@mrc.iisc.ernet.in and Roul, Basanta and Central Research Laboratory, Bharat Electronics, Bangalore and Shetty, Arjun},
abstractNote = {Nonpolar a-GaN (11-20) epilayers were grown on r-plane (1-102) sapphire substrates using plasma assisted molecular beam epitaxy. High resolution x-ray diffractometer confirmed the orientation of the grown film. Effect of the Ga/N ratio on the morphology and strain of a-GaN epilayers was compared and the best condition was obtained for the nitrogen flow of 1 sccm. Atomic force microscopy was used to analyze the surface morphology while the strain in the film was quantitatively measured using Raman spectroscopy and qualitatively analyzed by reciprocal space mapping technique. UV photo response of a-GaN film was measured after fabricating a metal-semiconductor-metal structure over the film with gold metal. The external quantum efficiency of the photodetectors fabricated in the (0002) polar and (11-20) nonpolar growth directions were compared in terms of responsivity and nonpolar GaN showed the best sensitivity at the cost of comparatively slow response time.},
doi = {10.1063/1.4937742},
url = {https://www.osti.gov/biblio/22492237},
journal = {AIP Advances},
issn = {2158-3226},
number = 12,
volume = 5,
place = {United States},
year = {Tue Dec 15 00:00:00 EST 2015},
month = {Tue Dec 15 00:00:00 EST 2015}
}